2.0 VERSION OF N-TOPCON CELL TECHNOLOGIES
The TOPCon cell applies cutting-edge and high-efficiency passivation contact technology, and uses a micro-nano tunneling oxide layer and a carrier-selective microcrystalline silicon film laminated functional structure on the back. This innovative structure demonstrates a two-way improvement in passivation performance and electrical conductivity, which brings significant improvements in cell conversion efficiency and power generation performance. The highest efficiency of N-type HOT2.0 cell is close to 25% in mass production, showing broad application prospects.
In short, TOPCon and HIT achieve efficiency improvements through passivation to reduce the number of sub-surface recombination rates. The former uses tunneling oxide layers and HIT
uses intrinsic amorphous silicon film. The differences in the methods lead to the respective manufacturing processes, resulting in the difference in the commercial cost between the two.